mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 6

• Manufacturer Part Number: mf1011b900y
• Description: Microwave Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
List of components (see Fig.3)
1997 Feb 18
handbook, halfpage
C1
C2,C3
C4
C5
C6, C7
L1, L2
L3
R
COMPONENT
Microwave power transistor
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
p
(W)
= 10 s;
P L
Fig.4 Load power as a function of input power.
1000
800
600
400
200
0
0
= 1%; V
50
CC
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
0.65 mm copper wire; total length = 26 mm;
height of loop = 10 mm
4 turns 0.65 mm copper wire;
total length = 48 mm
resistor
= 50 V; f = 1.09 GHz.
100
150
DESCRIPTION
200
P (W)
MLC722
i
250
6
handbook, halfpage
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
p
(%)
= 10 s;
c
Fig.5
60
40
20
100 pF
10 F; 50 V
1 mF; 63 V
0.8 to 8 pF
4.7 ; 0.5 W
0
0
VALUE
= 1%; V
Collector efficiency as a function of
input power.
50
CC
= 50 V; f = 1.09 GHz.
100
ATC 100A101kp50x
Erie 1250-003
Tekelec 729-1
ORDERING INFORMATION
150
MF1011B900Y
Product specification
200
P (W)
MLC723
i
250