mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 4
mf1011b900y
Manufacturer Part Number
mf1011b900y
Description
Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.MF1011B900Y.pdf
(12 pages)
Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. See “Mounting recommendations in the General part of handbook SC19a” .
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
Microwave performance up to T
1997 Feb 18
R
R
Z
I
I
I
V
V
OPERATION
mb
CBO
CES
EBO
th
(BR)CBO
(BR)CES
th j-mb
th mb-h
MODE OF
Microwave power transistor
SYMBOL
SYMBOL
Class C
= 25 C unless otherwise specified.
thermal resistance from junction to mounting base T
thermal resistance from mounting base to heatsink note 1
thermal impedance from junction to heatsink
collector cut-off current
collector cut-off current
emitter cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
t
t
t
t
p
p
p
p
= 10 s;
= 0.5 s; = 50%
= 112 s; = 1%
= 32 s;
CONDITIONS
= 1%
= 1%
PARAMETER
mb
PARAMETER
= 25 C in a common-base test circuit as shown in Fig.3.
1.03 to 1.09
(GHz)
1.09
1.09
f
4
I
V
I
I
I
E
C
C
C
BE
= 0; V
= 0; V
= 180 mA
= 180 mA; V
V
= 0; V
(V)
50
50
50
t
notes 1and 2
CC
p
CONDITIONS
j
CONDITIONS
= 10 s; = 1%;
= 120 C
CB
EB
CE
= 50 V
= 1.5 V
= 50 V
BE
typ. 900
typ. 750
typ. 870
= 0
(W)
P
800
L
27
27
7
65
65
MAX.
MF1011B900Y
typ. 6.5
typ. 5.7
typ. 6.3
0.84
0.01
0.2
MAX.
(dB)
G
6
Product specification
p
mA
mA
mA
V
V
typ. 48
typ. 36
typ. 46
UNIT
UNIT
K/W
K/W
K/W
(%)
40
C