mf1011b900y NXP Semiconductors, mf1011b900y Datasheet - Page 6
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mf1011b900y
Manufacturer Part Number
mf1011b900y
Description
Microwave Power Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.MF1011B900Y.pdf
(12 pages)
Philips Semiconductors
List of components (see Fig.3)
1997 Feb 18
handbook, halfpage
C1
C2,C3
C4
C5
C6, C7
L1, L2
L3
R
COMPONENT
Microwave power transistor
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
p
(W)
= 10 s;
P L
Fig.4 Load power as a function of input power.
1000
800
600
400
200
0
0
= 1%; V
50
CC
capacitor
tantalum capacitor
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
0.65 mm copper wire; total length = 26 mm;
height of loop = 10 mm
4 turns 0.65 mm copper wire;
total length = 48 mm
resistor
= 50 V; f = 1.09 GHz.
100
150
DESCRIPTION
200
P (W)
MLC722
i
250
6
handbook, halfpage
Class C pulse operation.
t
In broadband test circuit as shown in Fig.3.
p
(%)
= 10 s;
c
Fig.5
60
40
20
100 pF
10 F; 50 V
1 mF; 63 V
0.8 to 8 pF
4.7 ; 0.5 W
0
0
VALUE
= 1%; V
Collector efficiency as a function of
input power.
50
CC
= 50 V; f = 1.09 GHz.
100
ATC 100A101kp50x
Erie 1250-003
Tekelec 729-1
ORDERING INFORMATION
150
MF1011B900Y
Product specification
200
P (W)
MLC723
i
250