adg5213bcpz-rl7 Analog Devices, Inc., adg5213bcpz-rl7 Datasheet - Page 3

• Manufacturer Part Number: adg5213bcpz-rl7
• Description: High Voltage Latch-up Proof, Quad Spst Switches Adg5212/adg5213
• Manufacturer: Analog Devices, Inc.

SPECIFICATIONS
±15 V DUAL SUPPLY
V
Table 1.
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
1
Guaranteed by design; not subject to production test.
DD
Analog Signal Range
On Resistance, R
On-Resistance Match Between Channels, ∆R
On-Resistance Flatness, R
Source Off Leakage, I
Drain Off Leakage, I
Channel On Leakage, I
Input High Voltage, V
Input Low Voltage, V
Input Current, I
Digital Input Capacitance, C
t
t
Break-Before-Make Time Delay, t
Charge Injection, Q
Off Isolation
Channel-to-Channel Crosstalk
−3 dB Bandwidth
Insertion Loss
C
C
C
I
I
V
DD
SS
ON
OFF
S
D
D
DD
= +15 V ± 10%, V
(ADG5213 Only)
(Off)
(Off)
(On), C
/V
SS
S
(On)
INL
ON
or I
INJ
D
INL
S
(Off)
INH
D
INH
SS
(Off)
(On), I
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
FLAT(ON)
1
IN
S
(On)
D
ON
25°C
160
200
2
8
38
50
0.01
0.1
0.01
0.1
0.02
0.2
0.002
3
175
210
140
170
40
0.07
−105
−105
435
−6.8
3
5
8
45
55
0.001
−40°C to +85°C
250
9
65
0.2
0.2
0.25
255
195
Rev. 0 | Page 3 of 20
−40°C to +125°C
V
280
10
70
0.4
0.4
0.9
2.0
0.8
±0.1
280
215
20
70
1
±9/±22
DD
to V
SS
Unit
V max
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
dB typ
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
V min/V max
Test Conditions/Comments
V
see Figure 24
V
V
V
V
V
see Figure 23
V
see Figure 23
V
V
R
V
R
V
R
V
V
see Figure 31
R
see Figure 25
R
see Figure 27
R
R
see Figure 28
V
V
V
V
Digital inputs = 0 V or V
Digital inputs = 0 V or V
GND = 0 V
ADG5212/ADG5213
S
DD
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
L
S
S
S
DD
= ±10 V, I
= ±10 V, I
= ±10 V, I
= ±10 V, V
= ±10 V, V
= V
= 300 Ω, C
= 10 V, see Figure 30
= 300 Ω, C
= 10 V, see Figure 30
= 300 Ω, C
= 0 V, R
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= V
= V
= +13.5 V, V
= +16.5 V, V
= +16.5 V, V
D
GND
S2
= ±10 V, see Figure 26
= 10 V, see Figure 29
or V
S
= 0 Ω, C
L
L
L
L
S
S
S
D
D
L
L
L
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
= 5 pF, see Figure 28
= 5 pF, f = 1 MHz,
= −1 mA,
= −1 mA
= −1 mA
DD
= 35 pF
= 35 pF
= 35 pF
= ∓10 V,
= ∓10 V,
SS
SS
SS
= −13.5 V
= −16.5 V
= −16.5 V
L
= 1 nF,
DD
DD