m58lt256jsb STMicroelectronics, m58lt256jsb Datasheet - Page 80

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m58lt256jsb

Manufacturer Part Number
m58lt256jsb
Description
256 Mbit 16 Mb 16, Multiple Bank, Multilevel, Burst 1.8 V Supply, Secure Flash Memories
Manufacturer
STMicroelectronics
Datasheet

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Common Flash interface
80/108
Table 37.
Offset
01Bh
01Ch
01Dh
01Eh
01Fh
020h
021h
022h
023h
024h
025h
026h
000Ah
0017h
0020h
0085h
0095h
0008h
0009h
0000h
0001h
0001h
0002h
0000h
Data
CFI query system interface information
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for Buffer Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Buffer Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase or write voltage
logic supply maximum program/erase or write voltage
Description
n
n
times typical
n
ms
n
µs
n
times typical
times typical
n
M58LT256JST, M58LT256JSB
ms
n
n
times typical
µs
1024 µs
256 µs
512 µs
512 µs
Value
1.7 V
8.5 V
9.5 V
2 V
1 s
NA
4 s
NA

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