hip6303cbz-t Intersil Corporation, hip6303cbz-t Datasheet - Page 16

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hip6303cbz-t

Manufacturer Part Number
hip6303cbz-t
Description
Microprocessor Core Voltage Regulator Multiphase Buck Pwm Controller
Manufacturer
Intersil Corporation
Datasheet
dissipated by the Driver IC and don't heat the MOSFETs.
However, large gate-charge increases the switching time,
t
Ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature by
calculating the temperature rise according to package
thermal-resistance specifications. A separate heatsink may
be necessary depending upon MOSFET power, package
type, ambient temperature and air flow.
A diode, anode to ground, may be placed across Q2 and Q4
of Figure 1. These diodes function as a clamp that catches
the negative inductor swing during the dead time between
the turn off of the lower MOSFETs and the turn on of the
upper MOSFETs. The diodes must be a Schottky type to
prevent the lossy parasitic MOSFET body diode from
conducting. It is usually acceptable to omit the diodes and let
the body diodes of the lower MOSFETs clamp the negative
inductor swing, but efficiency could drop one or two percent
as a result. The diode's rated reverse breakdown voltage
must be greater than the maximum input voltage.
P
P
SW
UPPER
LOWER
which increases the upper MOSFET switching losses.
=
=
I
----------------------------------------------------------- -
I
-------------------------------------------------------------------------------- -
O
O
2
2
r
r
DS ON
DS ON
V
IN
V
IN
V
V
OUT
16
IN
+
V
I
--------------------------------------------------------- -
OUT
O
V
IN
2
t
SW
F
SW
HIP6303

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