pip201-12m NXP Semiconductors, pip201-12m Datasheet - Page 10

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pip201-12m

Manufacturer Part Number
pip201-12m
Description
Pip201-12m-3 Dc-to-dc Converter Powertrain
Manufacturer
NXP Semiconductors
Datasheet

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Product data
11.2 Advantages of an integrated driver
11.3 External connection of power and signal lines
T
The typical dissipation in each PIP201-12M as a function of output current, is given in
Figure
is 2.7 W. The typical thermal resistance from junction to ambient is given in
With thermal vias and forced air cooling, the thermal resistance of each PIP201-12M
from junction to ambient is15 K/W. Assuming a maximum ambient temperature of
55 C, the maximum junction temperature (T
The thermal resistance between the junction and the printed-circuit board is 5 K/W.
Therefore, the maximum printed-circuit board temperature (T
One problem in the design of low-voltage, high-current DC-to-DC converters using
discrete components, is stray inductance between the various circuit elements.
Stray inductance in the gate drive circuit increases the switching times of the
MOSFETs and causes high-frequency oscillation of the gate voltage.
Stray inductance in the high-current loop between V
losses and electromagnetic interference. In discrete designs, high-frequency electric
and magnetic fields radiate from PCB tracks and couple into adjacent circuits.
By integrating the power MOSFETs and their drive circuits into a single package,
stray inductance is virtually eliminated, resulting in a compact, efficient design.
In discrete designs, the delays in the MOSFET drivers must be long enough to
ensure no cross-conduction even when using the slowest MOSFETs. Use of an
integrated driver allows the propagation delays in the MOSFET drivers to be precisely
matched to the MOSFETs. This minimizes switching losses and eliminates
cross-conduction whilst allowing the circuit to operate at a higher frequency.
A major benefit of the PIP201-12M module is the ability to switch the internal power
MOSFETs faster than a DC-to-DC converter built from discrete components. This
reduces switching losses and increases system efficiency but it also results in higher
transient voltages on the device supply lines (V
rate of change of current (dI/dt) through the combined parasitic inductance of the pcb
tracks and the decoupling capacitors.
To minimize the amplitude of these transients, decoupling capacitors must be placed
between V
chip ceramic capacitors are recommended.
T
j max
pcb max
6. At 500 KHz and 12.5 A output current, the dissipation in each PIP201-12M
=
P
=
DDO
tot
T
j max
and V
R
Rev. 03 — 19 November 2003
th j a
SSO
P
tot
+
, as close as possible to the device pins. Low inductance,
T
amb
R
th j
=
pcb
2.7 15
=
95.5 2.7 5
+
55
j(max)
DDO
=
) is given by:
95.5 C
and V
DC-to-DC converter powertrain
DDO
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
=
PIP201-12M-3
and V
SSO
82 C
). This is due to the high
pcb(max)
SSO
causes switching
) is given by:
Table
10 of 20
4.
(1)
(2)

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