ld1010d ETC-unknow, ld1010d Datasheet

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ld1010d

Manufacturer Part Number
ld1010d
Description
High Performance N-channel Power Jfet With Pn Diodes
Manufacturer
ETC-unknow
Datasheet
1.LD1010D.pdf (5 pages)

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Pin Definitions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25qC
(V
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25qC)
Pin Number
PWRLITE LD1010D
High Performance N-Channel
Features
c Trench Power JFET with low threshold voltage Vth.
c Device fully “ON” with Vgs = 0.7V
c Optimum for “Low Side” Buck Converters
c Optimized for Secondary Rectification in isolated DC-DC
c Low Rg and low Cds for high speed switching
c No “Body Diode”; extremely low Cds
c Added Fast Recovery Schottky Diode in same package
Applications
c DC-DC Converters
c Synchronous Rectifiers
c PC Motherboard Converters
c Step-down power supplies
c Brick Modules
c VRM Modules
DPAK Pin Assignments
DD
= 5V
1
2
3
DC
, IL=60A
Pin Name
Source
Drain
Gate
G
G
G
PK
Parameter
, L=0.3mH, R
Pin Function Description
Gate. Transistor Gate
Drain. Transistor Drain
Source. Transistor Source
S
S
S
G
=100 :
D
D
D
P
OWERJFET
Symbol
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
T
V
V
V
E
V
P
I
I
T
STG
T
GD
D
D
AS
DS
GS
DS
24V
D
J
TM
(V)
N – Channel Power JFET
N – Channel Power JFET
N – Channel Power JFET
G
G
G
with PN Diodes
with PN Diode
with PN Diode
with PN Diode
Product Summary
-55 to 150qC
-65 to 150qC
Rdson (:)
Ratings
0.0045
260qC
-10
-28
100
220
80
24
50
D
D
D
S
S
S
LD1010D.Rev 1.2 12-04
I
Units
D
mJ
qC
qC
qC
50
W
V
V
V
A
A
(A)

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ld1010d Summary of contents

Page 1

... PN Diode with PN Diode Product Summary V (V) Rdson (:) DS 24V Symbol -55 to 150qC J T -65 to 150qC STG (A) D 0.0045 50 Ratings Units 24 V - 100 A 220 260qC LD1010D.Rev 1.2 12-04 ...

Page 2

... F V Forward Voltage F Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500Ps, duty cycle < Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010D Conditions -50PA ...

Page 3

... VGS(V) VGS(V) Figure 5 – Gate Voltage V G Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010D 0.100 0.100 1.000 1.000 – 10A Figure 2 – ...

Page 4

... rature ( rature (C) Figure 11 – Total Power Dissipation 4 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1010D 25.0 25.0 20.0 20.0 15.0 15.0 10.0 10.0 5.0 5.0 0.0 0.0 100 120 140 0 0 Figure 8 – On-Region Characteristics ...

Page 5

... This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design LD1010D LD1010D LD1010D AXXXXX AXXXXX AXXXXX XXXX XXXX XXXX ...

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