ld1010d ETC-unknow, ld1010d Datasheet - Page 3

• Manufacturer Part Number: ld1010d
• Description: High Performance N-channel Power Jfet With Pn Diodes
• Manufacturer: ETC-unknow

Typical Operating Characteristics
(T A = +25qC, unless otherwise noted.)
Figure 1 – R
Figure 3 – Breakdown Voltage Vds vs Id
Figure 5 – I
LD1010D
0.00E+00
0.E+00
0.E+00
0.0056
0.0056
0.0054
0.0054
0.0052
0.0052
0.0050
0.0050
0.0048
0.0048
0.0046
0.0046
0.0044
0.0044
0.0042
0.0042
0.0040
0.0040
0.0038
0.0038
0.0036
0.0036
0.0034
0.0034
0.0032
0.0032
0.0030
0.0030
1.E-01
1.E-01
9.E-02
9.E-02
8.E-02
8.E-02
7.E-02
7.E-02
6.E-02
6.E-02
5.E-02
5.E-02
4.E-02
4.E-02
3.E-02
3.E-02
2.E-02
2.E-02
1.E-02
1.E-02
1.40E-03
1.20E-03
1.00E-03
8.00E-04
6.00E-04
4.00E-04
2.00E-04
0.0
0.0
RDS(ID=-10A) vs IG, at Room Tem perature.
RDS(ID=-10A) vs IG, at Room Tem perature.
0.001
0.001
0
BVgs plot: Id vs Vds for Vgs=-4V
0.1
0.1
G
DSON
IG vs VGS, Source and Drain Grounded.
IG vs VGS, Source and Drain Grounded.
vs Gate Voltage V
5
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
0.2
0.2
vs Gate Current at I
0.010
0.010
At Room Temperature
At Room Temperature
Tel. [phone] Fax [phone] www.lovoltech.com
10
0.3
0.3
IG(A)
IG(A)
VGS(V)
VGS(V)
Vds(V)
0.4
0.4
15
0.100
0.100
0.5
0.5
GS
20
0.6
0.6
D
25
– 10A
0.7
0.7
1.000
1.000
30
0.8
0.8
Figure 4 – Capacitance vs Drain Voltage Vds
3500
3000
2500
2000
1500
1000
-1.0E-04
-3.0E-04
-5.0E-04
-7.0E-04
-9.0E-04
-1.1E-03
-1.3E-03
-1
-1
-2
-2
-3
-3
-4
-4
-5
-5
5.0E-04
3.0E-04
1.0E-04
2
2
1
1
0
0
500
Figure 2 – Total Gate Charge
0
0
0
0
Figure 6 – Typical Gate Voltage
Capacitive
Capacitive
-14
Charges
Charges
Region
Region
Capacitance vs VDS, VGS=-4V
10
10
-12
5
Total Gate Charge curves
Total Gate Charge curves
IG vs VGS, Drain Open
at Room Temp
-10
Characteristic
10
Room Temp
20
20
VDSV)
QtotG(nC)
QtotG(nC)
-8
DC Charges Region
DC Charges Region
15
VGSV)
-6
30
30
Product Specification
20
-4
-2
40
40
25
0
Coss
Crss
Ciss
5
5
2
0 0
3