ld1010d ETC-unknow, ld1010d Datasheet - Page 2

• Manufacturer Part Number: ld1010d
• Description: High Performance N-channel Power Jfet With Pn Diodes
• Manufacturer: ETC-unknow

Thermal Resistance
Electrical Specifications
(T A = +25qC, unless otherwise noted.)
The I denotes a specification which apply over the full operating temperature range.
BV
BV
BV
R
V
Q
Q
Q
Q
R
T
T
T
T
C
C
C
C
C
I
V
V
V
Qrr
1.
2
LD1010D
Symbol
Symbol
Notes:
R
D(ON
R
D(OFF)
F
R4
DS(ON
G
ISS
OSS
GS
GD
DS
R4
GS(TH)
G
GD
GS
SW
F
F
F
DSX
GDO
GSO
Pulse width <= 500Ps, duty cycle < = 2%
JA
JC
)
)
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Static
Breakdown Voltage
Drain to Source
Breakdown Voltage
Gate to Drain
Breakdown Voltage
Gate to Source
Static Drain to Source
Resistance (Current flows
drain-to-source) See Fig. 1
Gate Threshold Voltage
Dynamic
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Switching Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
PN Diode
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Charge
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Parameter
Tel. [phone] Fax [phone] www.lovoltech.com
Parameter
1
On
I
V
I
I
I
I
I
V
'V
V
V
Clamped Inductive Load
V
V
I
I
I
I
D
G
G
G
G
G
F
F
F
s
GS
DS
DD
Drive
DS
R
= 20 A di/dt = 100A/us,
= 0.5 mA
= -1 mA
= 40 mA, I
= 10 mA, I
= 5 mA, I
= 1 A
= 10 A
= 20 A
= -50PA
=20V, Vgs = -4V
Drive
= -4 V
=0.1 V, I
=10V, V
=16V, I
= 5 V
=5V, I
Conditions
D
GS
D
D
D
D
=15A
D
=250PA
=10A
=10A
=10A
= -5 V, 1MHz.
=10A,V
DS
=15V
-1200
Min.
Ratings
DPAK
24
1.6
80
Typ.
3000
2250
1100
-800
13.5
0.25
900
750
150
700
900
-12
4.0
4.5
4.6
1.5
0.4
20
12
12
10
20
5
2
Product Specification
Max.
-600
-28
-10
4.5
5.0
0.3
nC
nC
nC
nC
:
ns
pF
mA
mV
mV
mV
nC
Units
qC/W
qC/W
Units
m:
m:
mV
V
V
V