mtc2103bj4 Cystech Electonics Corp., mtc2103bj4 Datasheet - Page 4

• Manufacturer Part Number: mtc2103bj4
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: Cystech Electonics Corp.

Characteristic Curves
N-Channel
MTC2103BJ4
15
30
25
20
10
5
0
1.9
1.6
1.3
1.0
30
25
20
15
10
0.7
0.4
5
0
-50
0
1
V = 10V
GS
I = 8A
V = 10V
V = 10V
D
GS
DS
On-Resistance Variation with Temperature
-25
7V
V - Gate-S ource Voltage( V )
6V
1.5
T - Junction Temperature (° C)
GS
1
J
5V
V - Drain S ource Voltage(V)
On-Region Characteristics
Transfer Characteristics
DS
0
25
2.0
2
4.5V
T = -55° C
4V
A
50
CYStech Electronics Corp.
2.5
3
75
3.5V
125°C
100
3.0
4
25° C
125
150
3.5
5
1.8
1.6
1.4
1.0
0.001
2.4
2.2
2.0
1.2
0.8
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.01
100
0.1
10
1
0
V = 3.5 V
0
On-Resistance Variation with Drain Current and Gate Voltage
2
On-Resistance Variation with Gate-to-S ource Voltage
GS
V = 0V
GS
Body Diode Forward Voltage Variation
with S ource Current and Temperature
0.2
V - Body Diode Forward Voltage( V )
S D
6
I - Drain Current(A)
4
D
0.4
V - Gate-S ource Voltage( V )
GS
T = 125°C
A
4.0 V
12
4.5 V
0.6
25° C
6
0.8
T = 25°C
-55° C
18
A
5.0 V
CYStek Product Specification
Spec. No. : C448J4
Issued Date : 2009.03.10
Revised Date :
Page No. : 4/11
6.0 V
T = 125°C
1.0
A
7.0 V
I = 4 A
D
8
24
10 V
1.2
1.4
10
30