si7921dn-t1-e3 Vishay, si7921dn-t1-e3 Datasheet

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... PowerPAK 1212-8 3. Bottom View Ordering Information: Si7921DN-T1 Si7921DN–T1–E3 (Lead (Pb)–free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150°C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si7921DN Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

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... Document Number: 72341 S-51210–Rev. B, 27-Jun-05 New Product = 25°C, unless otherwise noted ˚ C ˚ 0.8 1.0 1.2 1.4 Si7921DN Vishay Siliconix 800 600 C iss 400 200 C oss C rss – Drain-to-Source Voltage (V) DS Capacitance 1 ...

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... Si7921DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.6 0.4 0 250 µA D 0.0 –0.2 –0.4 –50 – – Temperature ( J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 New Product = 25°C, unless otherwise noted A 75 100 ...

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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72341. Document Number: 72341 S-51210–Rev. B, 27-Jun-05 New Product = 25°C, unless otherwise noted A –3 – Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7921DN Vishay Siliconix – www.vishay.com 5 ...