si7921dn-t1-e3 Vishay, si7921dn-t1-e3 Datasheet - Page 4

• Manufacturer Part Number: si7921dn-t1-e3
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7921DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
–0.2
–0.4
0.6
0.4
0.2
0.0
–50
0.01
0.1
2
1
10
–25
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0
T
Threshold Voltage
I
J
D
– Temperature (
25
= 250 µA
10
Single Pulse
–3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
˚
C)
A
0.01
100
100
0.1
= 25°C, unless otherwise noted
10
10
1
0.1
–2
Safe Operating Area, Junction-To-Ambient
125
r
DS(on)
Limited
New Product
I
D(on)
Square Wave Pulse Duration (sec)
Single Pulse
150
T
V
A
Limited
DS
= 25
– Drain-to-Source Voltage (V)
10
˚
C
1
–1
BV
DSS
Limited
10
30
25
20
15
10
I
DM
1
5
0
0.001
Limited
Single Pulse Power, Juncion-To-Ambient
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
0.1
DM
JM
Time (sec)
– T
t
A
1
S-51210–Rev. B, 27-Jun-05
= P
t
Document Number: 72341
2
1
DM
Z
thJA
thJA
100
t
t
1
2
(t)
10
= 75
˚
C/W
100
600
600