si7921dn-t1-e3 Vishay, si7921dn-t1-e3 Datasheet - Page 3

• Manufacturer Part Number: si7921dn-t1-e3
• Description: Dual P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS T
Document Number: 72341
S-51210–Rev. B, 27-Jun-05
0.30
0.25
0.20
0.15
0.10
0.05
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
= 5.1 A
Source-Drain Diode Forward Voltage
0.2
= 15 V
On-Resistance vs. Drain Current
2
V
4
V
SD
Q
GS
0.4
g
– Source-to-Drain Voltage (V)
= 4.5 V
– Total Gate Charge (nC)
I
4
D
Gate Charge
– Drain Current (A)
8
0.6
T
6
J
= 150
0.8
12
˚
C
8
T
J
A
V
1.0
= 25
GS
= 25°C, unless otherwise noted
= 10 V
˚
16
C
10
1.2
New Product
1.4
12
20
800
600
400
200
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
–25
GS
rss
= 5.1 A
5
= 10 V
2
V
T
0
V
DS
J
– Junction Temperature (
GS
10
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
Capacitance
25
4
15
50
Vishay Siliconix
C
C
iss
oss
I
D
= 5.1 A
75
6
Si7921DN
20
www.vishay.com
100
˚
C)
8
25
125
150
30
10
3