ssm6k407tu TOSHIBA Semiconductor CORPORATION, ssm6k407tu Datasheet

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ssm6k407tu

Manufacturer Part Number
ssm6k407tu
Description
Toshiba Field-effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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0
○ DC−DC Converter, Relay Drive and Motor Drive
Absolute Maximum Ratings
Applications
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Mounted on an FR4 board
Low ON-resistance
4V drive
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
:R
:R
on
on
Pulse
DC
= 440mΩ (max) (@V
= 300mΩ (max) (@V
SSM6K407TU
(Ta = 25℃) (Note)
Symbol
P
V
V
T
I
D
T
GSS
DSS
I
DP
stg
D
ch
(Note1)
GS
GS
−55~150
= 4 V)
= 10 V)
Rating
±20
500
150
1
60
2
2
6
)
Unit
mW
°C
°C
V
V
A
Weight: 7mg (typ.)
JEDEC
JEITA
TOSHIBA
UF6
1
2
3
SSM6K407TU
1,2,5,6 : Drain
3
4
2.1±0.1
1.7±0.1
2-2T1D
2007-11-01
: Gate
: Source
Unit: mm
6
5
4

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ssm6k407tu Summary of contents

Page 1

... Unit DSS ± GSS (Note1) 500 mW D °C T 150 ch −55~150 °C T stg SSM6K407TU Unit: mm 2.1±0.1 1.7±0 1,2,5,6 : Drain 3 : Gate UF6 4 : Source ⎯ JEDEC ⎯ JEITA TOSHIBA 2-2T1D Weight: 7mg (typ.) 2007-11-01 ...

Page 2

... Ω V off DSF SSM6K407TU Min Typ. Max ― ― ±10 ― ― 100 60 ― ― 0.8 ― 2.0 ― 0.33 0.44 (Note2) ― 0.22 0.30 (Note2) 1.0 2.0 ― ― 150 ― ...

Page 3

... Common Source (c) V OUT Ta = 25°C (top view requires a higher voltage than V GS (on) GS (off) 3 SSM6K407TU 10 V 90% 10 90% 10 (ON off = 1 mA for D and V requires a lower th GS (off) < ...

Page 4

... SSM6K407TU 2007-11-01 ...

Page 5

... SSM6K407TU 2007-11-01 ...

Page 6

... Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 100 10 1 0.001 0.01 0 Pulse width t ( 0.8 0.6 0.4 0.2 0 100 1000 0 6 SSM6K407TU P – Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 mm2 100 Ambient temperature Ta (°C) 2007-11-01 150 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM6K407TU 20070701-EN 2007-11-01 ...

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