ssm6k407tu TOSHIBA Semiconductor CORPORATION, ssm6k407tu Datasheet - Page 3

• Manufacturer Part Number: ssm6k407tu
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Notice on Usage
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
(a) Test Circuit
th
6
1
can be expressed as the voltage between gate and source when the low operating current value is I
10V
KNF
0
10 μs
5
2
th.
(The relationship can be established as follows: V
IN
4
3
Equivalent Circuit
V
DD
V
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
DD
IN
G
GS (on)
: t
= 50 Ω
6
1
= 30 V
r
, t
f
< 5 ns
(top view)
5
2
requires a higher voltage than V
3
4
3
(b) V
(c) V
GS (off)
OUT
IN
< V
th
10 V
V
0 V
V
DD
DS (ON)
< V
GS (on).
th
and V
)
t
on
10%
GS (off)
t
SSM6K407TU
r
10%
90%
requires a lower
D
2007-11-01
90%
t
off
= 1 mA for
t
f