ssm6k407tu TOSHIBA Semiconductor CORPORATION, ssm6k407tu Datasheet - Page 2

• Manufacturer Part Number: ssm6k407tu
• Description: Toshiba Field-effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics (Ta = 25℃)
Note 2: Pulse test
Gate leakage current
Drain cutoff current
Drain–source breakdown voltage
Gate threshold voltage
Drain–source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain–source forward voltage
Characteristic
Turn-on time
Turn-off time
V
R
Symbol
(BR) DSS
DS (ON)
V
I
I
C
|Y
C
C
Q
Q
GSS
DSS
V
t
t
Q
DSF
oss
on
off
rss
iss
gs
gd
th
fs
g
|
V
V
I
V
V
V
V
V
f = 1 MHz
V
V
V
I
I
D
D
D
GS
DS
DS
GS
GS
DS
DS
DD
GS
DD
= 10 mA, V
= 2 A
= -2 A, V
2
= 60 V, V
= 10 V, l
= 10 V, I
= 10 V, V
= ±16 V, V
= 4 V, I
= 10 V, I
= 30 V, I
= 0 ~10 V, R
= 48 V, V
Test Condition
GS
D
D
D
D
D
GS
GS
= 1 A
GS
GS
= 0 V
= 1 mA
= 1 A
= 1 A
= 1 A
DS
= 0 V
G
= 0 V
= 0 V
= 10 V
= 0 V
= 50 Ω
(Note2)
(Note2)
(Note2)
(Note2)
Min
0.8
1.0
―
―
60
―
―
―
―
―
―
―
―
―
―
―
SSM6K407TU
Typ.
0.33
0.22
-1.0
150
150
2.0
6.0
4.6
1.4
―
―
―
―
25
70
30
2007-11-01
−1.5
Max
0.44
0.30
100
±10
2.0
―
―
―
―
―
―
―
―
―
―
Unit
μA
μA
pF
nC
ns
Ω
V
V
S
V