ssm6k403tu TOSHIBA Semiconductor CORPORATION, ssm6k403tu Datasheet

no-image

ssm6k403tu

Manufacturer Part Number
ssm6k403tu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
○ Power Management Switch Applications
○ High-Speed Switching Applications
Absolute Maximum Ratings
1.5V drive
Low ON-resistance:R
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note 1: Mounted on an FR4 board
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS
R
R
R
on
on
on
on
= 66mΩ (max) (@V
= 43mΩ (max) (@V
= 32mΩ (max) (@V
= 28mΩ (max) (@V
Pulse
DC
SSM6K403TU
(Ta = 25˚C) (Note)
P
D
Symbol
V
V
T
I
T
GSS
DSS
(Note1)
I
DP
stg
D
ch
GS
GS
GS
GS
= 1.5V)
= 2.5V)
= 1.8V)
= 4.0V)
−55~150
Rating
±10
500
150
4.2
8.4
2
20
)
1
Unit
mW
°C
°C
V
V
A
weight: 7.0mg (typ.)
JEDEC
JEITA
TOSHIBA
UF6
1
2
3
SSM6K403TU
1,2,5,6 : Drain
3
4
2.1±0.1
1.7±0.1
2-2T1D
: Gate
: source
2007-11-01
UNIT: mm
6
5
4

Related parts for ssm6k403tu

ssm6k403tu Summary of contents

Page 1

... Rating Unit DSS ± GSS (Note1) 500 mW D °C T 150 ch −55~150 °C T stg SSM6K403TU UNIT: mm 2.1±0.1 1.7±0 1,2,5,6 : Drain 3 : Gate UF6 4 : source JEDEC ― JEITA ― TOSHIBA 2-2T1D weight: 7.0mg (typ.) 2007-11-01 ...

Page 2

... 0~2 off = -4 DSF SSM6K403TU Min Typ. ⎯ 20 ⎯ 12 ⎯ ⎯ ⎯ ⎯ ⎯ 0.35 (Note2 ⎯ (Note2) 19 ⎯ (Note2) 23 ⎯ (Note2) 28 ⎯ 35 ⎯ 1050 ⎯ ...

Page 3

... D.U. < < Common Source (c) V OUT Ta = 25°C (top view requires a higher voltage than V GS (on) GS (off) 3 SSM6K403TU 2.5 V 90% 10 90% 10 (ON off = 1 mA for D and V requires a lower th GS (off) < ...

Page 4

... Ta = 100 °C 0.01 0.001 0.0001 0.6 0 (V) Gate-source voltage V 100 Common Source Ta = 25°C 50 1.8 V 1.5 V VGS = 4.0V − 25 ° 1.0 0.5 0 −50 150 Ambient temperature Ta (°C) 4 SSM6K403TU I – °C − 25 °C 1.0 2.0 ( – (ON Drain current I ( – ...

Page 5

... Ta =100 °C 0.01 0.001 10 0 1000 t off t f 100 C iss C oss rss 100 0.01 ( SSM6K403TU I – °C Common Source −25 °C S –0.5 –1.0 –1.5 Drain-source voltage V ( – Common Source ∼ ...

Page 6

... Cu Pad: 645 mm 100 10 1 0.001 0.01 0 Pulse width t (s) w 1000 ) 800 600 400 200 0 -40 -20 100 1000 Ambient temperature T 6 SSM6K403TU P – Mounted on FR4 board 2 (25.4mm × 25.4mm × 1. Pad : 645 100 140 160 120 (°C) a 2007-11-01 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM6K403TU 20070701-EN 2007-11-01 ...

Related keywords