ssm6k403tu TOSHIBA Semiconductor CORPORATION, ssm6k403tu Datasheet - Page 4

• Manufacturer Part Number: ssm6k403tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
100
50
50
0
0
8
6
4
2
0
−50
0
0
4.0 V
Common Source
10 V
Gate-source voltage V
Drain-source voltage V
Ambient temperature Ta (°C)
1.0 A / 1.8 V
0
0.2
R
DS (ON)
R
1.8 V
DS (ON)
I
D
2.5 V
– V
50
1.5 V
5
– V
DS
0.4
I D = 0.5 A / V GS = 1.5 V
3.0 A / 2.5 V
25 °C
– Ta
GS
Common Source
Ta = 25 °C
I D =3.0 A
Common Source
Ta = 25°C
GS
DS
100
3.0 A / 4.0 V
VGS = 1.2 V
Ta = 100 °C
(V)
(V)
0.6
− 25 °C
150
10
4
0.0001
0.001
100
0.01
50
0.1
10
1.0
0.5
0
1
0
−50
0
0
1.5 V
VGS = 4.0V
Common Source
Ta = 25°C
Common Source
V DS = 3 V
Ta = 100 °C
Gate-source voltage V
Ambient temperature Ta (°C)
1.8 V
Drain current I
2
0
R
DS (ON)
2.5 V
I
D
− 25 °C
V
– V
th
1.0
4
50
– Ta
GS
– I
25 °C
D
D
Common Source
V DS = 3 V
I D = 1 mA
(A)
SSM6K403TU
GS
100
6
(V)
2007-11-01
150
2.0
8