ssm6k403tu TOSHIBA Semiconductor CORPORATION, ssm6k403tu Datasheet - Page 2

• Manufacturer Part Number: ssm6k403tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain-source forward voltage
Note 2: Pulse test
Characteristic
Turn-on time
Turn-off time
(
Ta = 25˚C
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
I
C
|Y
C
C
GSS
DSS
Q
Q
V
t
t
Q
DSF
oss
on
off
rss
iss
th
fs
gs
gd
g
|
)
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
DD
GS
= 1 mA, V
= 1 mA, V
= 3.0 A, V
= 3.0 A, V
= 1.0 A, V
= 0.5 A, V
= -4.2 A, V
=20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= ±10 V, V
= 10 V, I
= 4 V
= 10 V, I
= 0~2.5 V, R
2
Test Condition
D
D
GS
GS
GS
GS
GS
GS
GS
D
D
GS
= 1 mA
= 3.0 A
GS
= 4.2 A
DS
= 1 A
= 0 V
= -10V
= 4.0 V
= 2.5 V
= 1.8 V
= 1.5 V (Note2)
= 0 V
= 0 V
G
= 0 V, f = 1 MHz
= 0 V
= 4.7 Ω
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
0.35
Min
20
12
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM6K403TU
1050
Typ.
16.8
12.1
-0.8
175
160
4.7
20
19
23
28
35
18
32
⎯
⎯
⎯
⎯
⎯
2007-11-01
Max
-1.2
1.0
⎯
⎯
±1
⎯
28
32
43
66
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
V