ssm3j132tu TOSHIBA Semiconductor CORPORATION, ssm3j132tu Datasheet
ssm3j132tu
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ssm3j132tu Summary of contents
Page 1
... T -55 to 150 stg and the significant change etc.) are within the Reliability Handbook (“Handling Equivalent Circuit (top view SSM3J132TU 2.1±0.1 1.7±0 Gate 2: Source UFM 3: Drain in JEDEC ― JEITA ― 2-2U1A TOSHIBA Weight: 6.6 mg (typ.) 2010-05-31 Unit ...
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... Ta = 25°C Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I th SSM3J132TU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate-source voltage V 50 Common source Pulse test -0. -1 -2. -5. −50 -10 Ambient temperature Ta (°C) 3 SSM3J132TU I – 100°C 25°C -25°C -0.5 -0.75 -1 -1.25 ( – (ON -2.0A Common source Pulse test 25° 100°C −25°C ...
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... Ta = 25° MHz -100 -0.1 Drain-source voltage V Dynamic Input Characteristic -8 Common source -5 25° -10 Total Gate Charge Qg (nC) 4 SSM3J132TU I – Common source Pulse test 25 ° −25 °C S 0.4 0.6 0.8 1.0 1.2 ( – V ...
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... Cu Pad : 645 mm b: Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , Cu Pad : 645 mm 800 a 600 b 400 200 ×3) 0 100 600 -40 -20 Ambient temperature Ta (°C) 5 SSM3J132TU P – 100 120 140 160 2010-05-31 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J132TU 2010-05-31 ...