ssm3j132tu TOSHIBA Semiconductor CORPORATION, ssm3j132tu Datasheet - Page 4

• Manufacturer Part Number: ssm3j132tu
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
-1.0
100
-0.5
100
10
1.0
0.1
10
-0.01
1
−50
0
-0.01
t on
t off
Common source
V DS = -3 V
Ta = 25 °C
Pulse test
t r
t f
Ambient temperature Ta (°C)
-0.1
0
Drain current I
Drain current I
-0.1
V
th
t – I
|Y
– Ta
50
fs
-1
D
| – I
D
D
D
-1
Common source
V DD = -10 V
V GS = 0 to -2.5 V
Ta = 25 °C
R G = 4.7Ω
Common source
V DS = -3 V
I D = -1 mA
(A)
(A)
100
-10
150
-100
-10
4
0.001
10000
0.01
5000
3000
1000
100
0.1
10
500
300
100
1
50
30
10
-8
-6
-4
-2
0
-0.1
0
0
Common source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Common source
I D = -5.4 A
Ta = 25°C
0.2
Drain-source voltage V
100 °C
Drain-source voltage V
10
Total Gate Charge Qg (nC)
Dynamic Input Characteristic
V DD = - 6 V
0.4
-1
−25 °C
20
C – V
I
DR
0.6
– V
DS
25 °C
DS
SSM3J132TU
30
-10
V DD = - 9.6 V
0.8
DS
C oss
C rss
Common source
V GS = 0 V
Pulse test
C iss
DS
G
2010-05-31
40
(V)
1.0
(V)
S
D
I
DR
-100
1.2
50