ssm3j132tu TOSHIBA Semiconductor CORPORATION, ssm3j132tu Datasheet - Page 2

• Manufacturer Part Number: ssm3j132tu
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Notice on Usage
SSM3J132TU). Then, for normal switching operation, V
V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
and pad area. When using this device, please take heat dissipation into consideration.
th.
Let V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
Thermal resistance R
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source forward voltage
Note 3: Pulse test
Note 4: V
(a) Test Circuit
This relationship can be expressed as: V
−
2.5V
th
0
be the voltage applied between gate and source that causes the drain current (I
rating of drain-source voltage
10 μs
DSX
V
R
Duty ≤ 1%
V
Common Source
Ta = 25°C
Characteristic
DD
IN
G
: t
mode (the application of a plus voltage between gate and source) may cause decrease in maximun
= 4.7 Ω
= -10 V
r
, t
f
Turn-on time
Turn-off time
< 5 ns
IN
th (ch-a)
and power dissipation P
(Ta = 25°C)
R
V
OUT
V
V
L
DD
R
Symbol
(BR) DSS
(BR) DSX
⏐Y
V
DS (ON)
I
Q
I
C
C
C
Q
GSS
DSS
V
t
Q
t
DSF
off
oss
on
gs1
rss
iss
gd
th
fs
g
⏐
GS(off)
I
I
V
V
V
V
I
I
I
I
I
V
f = 1 MHz
V
V
V
V
I
D
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
DD
GS
< V
= -1 mA, V
= -1 mA, V
= -5.0 A, V
= -5.0 A, V
= -3.5 A, V
= -1.5 A, V
= -0.4 A, V
= 5.4 A, V
(b) V
(c) V
= -10 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= ±6 V, V
= -10 V, I
= 0 to -2.5 V, R
= -6 V, I
= -4.5 V
th
D
GS(on)
< V
vary depending on board material, board area, board thickness
2
OUT
IN
Test Conditions
GS(on)
GS
D
D
DS
GS
GS
GS
GS
GS
GS
GS
D
DS
must be higher than V
= -1 mA
= -2.0 A
GS
GS
= -1.0 A
= 0 V
= -5.4 A,
= 0 V
= 5 V
= -4.5 V
= -2.5 V
= -1.8 V
= -1.5 V
= -1.2 V
= 0 V
= 0 V
= 0 V
.
G
= 4.7 Ω
V
V
DD
DS (ON)
−2.5 V
0 V
(Note 4)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
th,
t
on
90%
-0.3
and V
Min
-12
⎯
⎯
⎯
⎯
⎯
⎯
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-7
t
r
D
90%
10%
GS(off)
) to be low (-1 mA for the
2700
Typ.
0.68
525
525
210
4.3
22
14
17
20
23
31
38
33
⎯
⎯
⎯
⎯
⎯
8
SSM3J132TU
t
10%
off
must be lower than
Max
-1.0
1.0
±1
17
21
29
39
94
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
2010-05-31
t
f
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V