as7c31026c Alliance Memory, Inc, as7c31026c Datasheet - Page 3

• Manufacturer Part Number: as7c31026c
• Description: 3.3 V 64k X 16 Cmos Sram
• Manufacturer: Alliance Memory, Inc

V
V
Capacitance (f = 1MHz, T
Recommended operating conditions
Supply voltage
Input voltage
DC operating characteristics (over the operating range)
Note:
1. This parameter is guaranteed by device characterization, but is not production tested.
Input capacitance
I/O capacitance
Ambient operating temperature (industrial)
Input leakage current
Output leakage current
Operating power supply current
Standby power supply current
Output voltage
IH =
IL
9/20/06, v 2.0
= -2.0V for pulse width less than 5ns, once per cycle.
V
CC
+2.0V for pulse width less than 5ns, once per cycle.
Parameter
Parameter
Parameter
a
= 25 °C, V
Symbol
C
C
I/O
IN
CC
| I
Sym
Alliance Memory
| I
V
V
I
I
I
SB1
LO
CC
SB
LI
OL
OH
Symbol
= NOMINAL)
|
|
V
V
V
T
CC
A, CE, WE, OE, LB, UB
IH
IL
A
V
Signals
CC
I
I/O
I
OH
®
V
CE ? V
OL
V
= Max, CE ? V
IN
V
CE ? V
OUT
Test conditions
= –4 mA, V
2
IN
= 8 mA, V
1
V
Min
–0.5
? V
–40
3.0
2.0
V
V
V
V
IN
= GND to V
CE = V
CC
CC
= GND to V
CC
CC
IL
f = f
CC
? 0.2 V or
, I
IH
= Max,
= Max,
= Max
= Max
–0.2 V, f = 0
OUT
, f = f
Max
IH
CC
CC
,
= 0mA
CC
Max
= Min
= Min
CC
–0.2 V,
CC
Nominal
V
Test conditions
IN
3.3
–
–
–
V
= V
IN
OUT
= 0 V
AS7C31026C-12
AS7C31026C
= 0 V
Min
2.4
–
–
–
–
–
–
V
CC
Max
3.6
0.8
85
+ 0.5
Max
Max
160
0.4
45
10
6
7
P. 3 of 10
5
5
–
Unit
Unit
Unit
pF
pF
o
mA
mA
mA
µA
µA
V
V
V
V
V
C