m36l0r8060t0 STMicroelectronics, m36l0r8060t0 Datasheet - Page 12

• Manufacturer Part Number: m36l0r8060t0
• Description: 256 Mbit Multiple Bank, Multi-level, Burst Flash Memory 64 Mbit Burst Psram, 1.8v Supply, Multi-chip Package
• Manufacturer: STMicroelectronics

M36L0R8060T0, M36L0R8060B0
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 4. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Table 5. Device Capacitance
Note: Sampled only, not 100% tested.
12/18
V
V
V
V
V
Ambient Operating Temperature
Load Capacitance (C
Output Circuit Resistors (R
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
CCP
DDQ
PPF
PPF
V DDQ
Symbol
C
Supply Voltage
0V
Supply Voltage
Supply Voltage
Supply Voltage (Factory environment)
Supply Voltage (Application environment)
C
OUT
IN
Input Capacitance
Output Capacitance
Parameter
L
)
Parameter
1
, R
2
)
V DDQ /2
AI06161
Test Condition
V
V
OUT
–0.4
Min
–25
IN
1.7
1.7
8.5
–
Flash Memory
= 0V
= 0V
0 to V
Conditions summarized in
AC Measurement
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Figure 6. AC Measurement Load Circuit
0.1µF
V
16.7
DDQ
30
V
DDF
DDQ
/2
V
DDQ
0.1µF
Max
1.95
1.95
9.5
85
–
5
V
+0.4
DDQ
C
L
Min
includes JIG capacitance
Conditions. Designers should
DEVICE
UNDER
TEST
Min
–25
1.7
1.7
–
–
–
0 to V
Table 4., Operating and
PSRAM
V
16.7
DDQ
Max
30
14
18
V
DDQ
DDQ
/2
C
R
Max
1.95
1.95
L
85
1
–
–
–
Unit
pF
pF
AI08364B
R
2
Unit
k
°C
pF
ns
V
V
V
V
V
V
V