tpcp8007-h TOSHIBA Semiconductor CORPORATION, tpcp8007-h Datasheet
tpcp8007-h
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tpcp8007-h Summary of contents
Page 1
... V V GSS 150 °C ch −55 to 150 T °C stg 1 TPCP8007-H Unit: mm ⎯ JEDEC ⎯ JEITA TOSHIBA 2-3V1K Weight: 0.017g (typ.) Circuit Configuration Marking (Note 5) 8007H 2009-08-12 ...
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... Year of manufacture (The last digit of the year) Symbol Max Unit R 74.4 °C/W th (ch-a) (Note 2a) R 148.8 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCP8007-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2009-08-12 ...
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... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ DSF TPCP8007-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 60 ⎯ ⎯ 45 ⎯ 1.3 2.3 ⎯ ⎯ ⎯ ...
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... Drain-source voltage V 0.6 0.4 0 Gate-source voltage V 1000 Common source ℃ Pulse test 100 10 100 0.1 Drain current I 4 TPCP8007-H I – 3.6 3.4 3 2.7 V 0.8 2 1.2 1.6 ( – Common source Ta = 25℃ Pulse test 2.5 1 ...
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... Common source 0 rss 0.1 mA Pulse test 0 100 −80 −40 ( 160 200 0 C) ° 5 TPCP8007-H I – 4 −0.4 −0.6 −0.8 −1 −1.2 ( – 120 160 Ambient temperature ° ...
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... I D max (Pulse 0.1 * Single – pulse Ta = 25℃ 0.01 Curves must be derated linearly with increase in temperature. V DSS max 0.001 0 Drain-source voltage – 0 Pulse width t (s) w 100 (V) 6 TPCP8007-H (2) (1) Single - pulse 100 1000 2009-08-12 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8007-H 2009-08-12 ...