tpcp8007-h TOSHIBA Semiconductor CORPORATION, tpcp8007-h Datasheet - Page 3

• Manufacturer Part Number: tpcp8007-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Peak forward current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
C
|Y
C
Q
GSS
DSS
V
I
t
t
Q
DSF
rg
FP
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty ≤ 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 5 A, V
(Ta = 25°C)
= ±20 V, V
= 60 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 10 V, V
≈ 48 V, V
≈ 48 V, V
≈ 48 V, V
10 V
0 V
Test Condition
Test Condition
GS
w
D
D
D
GS
GS
D
GS
GS
GS
GS
GS
GS
= 10 μs
= 0.1 mA
= 2.5 A
DS
= 2.5 A
= 0 V
= 2.5 A
⎯
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 2.5 A
DD
D
≈ 30 V
D
D
= 5 A
= 5 A
= 5 A
V
OUT
Min
Min
1.3
60
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
Typ.
Typ.
640
3.2
2.4
7.8
2.4
5.8
2.3
1.7
2.7
47
40
16
25
90
18
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8007-H
2009-08-12
±100
−1.2
Max
Max
900
2.3
4.6
10
64
57
40
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V