tpcp8007-h TOSHIBA Semiconductor CORPORATION, tpcp8007-h Datasheet - Page 5

• Manufacturer Part Number: tpcp8007-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
80
60
40
20
1.6
1.2
0.8
0.4
10
0
−80
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = 10 V
Capacitance – V
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t=5 s
0
1
board (a) (Note 2a)
board (b) (Note 2b)
R
80
DS (ON)
P
D
I D = 1.3, 2.5, 5 A
40
– Ta
– Ta
120
80
10
DS
I D = 1.3, 2.5, 5 A
DS
160
°
(V)
120
C)
°
C)
C oss
C rss
C iss
160
100
200
5
2.5
1.5
0.5
100
50
40
30
20
10
0.1
10
3
2
1
0
0
−80
1
0
0
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 0.1 mA
Pulse test
12
24
−0.2
V DS = 48 V
−40
Drain-source voltage V
Ambient temperature Ta (
Total gate charge Q
4
Dynamic input/output
−0.4
0
characteristics
10
I
DR
4.5
V
th
−0.6
1
– V
40
8
– Ta
3
V DD = 48 V
DS
12
−0.8
80
g
V GS = 0 V
DS
Common source
I D = 5 A
Ta = 25°C
Pulse test
(nC)
12
TPCP8007-H
24
°
(V)
120
C)
−1
2009-08-12
−1.2
160
16
20
16
12
8
4
0