tpcp8504 TOSHIBA Semiconductor CORPORATION, tpcp8504 Datasheet - Page 3
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tpcp8504
Manufacturer Part Number
tpcp8504
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8504.pdf
(5 pages)
0.001
0.01
2.4
2.0
1.6
1.2
0.8
0.4
0.1
2.0
1.6
1.2
0.8
0.4
0.001
0
1
0
0
0
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
30
Collector−emitter voltage V
40
60
Base−emitter voltage V
0.2
Ta = 100°C
Collector current I
0.01
0.4
20
0.4
Ta = 100°C
−55°C
V
CE (sat)
I
I
C
C
– V
– V
0.6
0.1
0.8
CE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
BE
– I
25
C
25°C
0.8
C
BE
CE
(A)
1.2
1
I B = 2 mA
(V)
1.0
10
(V)
−55
6
4
8
1.2
1.6
10
3
10000
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
0.1
10
0.001
10
0.001
0
0
1
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
20
Ambient temperature Ta (°C)
Ta = 100°C
Collector current I
40
Collector current I
0.01
0.01
25°C
−55
25
60
Ta = −55°C
V
BE (sat)
P
h
FE
c
80
– Ta
0.1
0.1
DC operation
Mounted on an FR4 board
glass epoxy, 1.6 mm thick,
Cu area: 645 mm
– I
C
– I
100
100°C
C
C
C
120
(A)
(A)
1
1
Ta = 25 °C
2
)
140
TPCP8504
2006-11-13
160
10
10