mbn1200h45e2 CT-Concept Technologie AG, mbn1200h45e2 Datasheet - Page 3

• Manufacturer Part Number: mbn1200h45e2
• Description: Silicon N-channel Igbt
• Manufacturer: CT-Concept Technologie AG

IGBT MODULE
STATIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector Current vs. Collector to Emitter Voltage
、 、 、 、
、 、 、 、
MBN1200H45E2
2000
1500
1000
7
6
5
4
3
2
1
0
500
0
0
0
VGE=15V
Loss vs.Collector Current
Collector-Emitter Voltage Vce[V]
or Forward Current, IF(A)
1
Collector Current Ic (A)
500
2
25
℃ ℃ ℃ ℃
3
1000
Target
Target
Target
Target
4
Target
Target
Target
Target
125
Eoff
Eon
Err
℃ ℃ ℃ ℃
5
1500
【 【 【 【 Conditions】 】 】 】
Tj=125℃ ℃ ℃ ℃
Vcc=2600V
L=150nH
RG(on/off)=3.3/3.3Ω Ω Ω Ω
VG=± ± ± ± 15V
Inductive Load
2000
1500
1000
500
0
Forward Voltage of free-wheeling diode
0
Forward Voltage VF[V]
1
Target
25
2
℃ ℃ ℃ ℃
Spec.No.IGBT-SP-08007 R3 P
Specification
3
Target
Target
Target
Target
125
4
℃ ℃ ℃ ℃
5
3