mbn1200h45e2 CT-Concept Technologie AG, mbn1200h45e2 Datasheet - Page 4
mbn1200h45e2
Manufacturer Part Number
mbn1200h45e2
Description
Silicon N-channel Igbt
Manufacturer
CT-Concept Technologie AG
Datasheet
1.MBN1200H45E2.pdf
(5 pages)
IGBT MODULE
TRANSIENT THERMAL IMPEDANCE
MBN1200H45E2
Please note that following materials are contained in the product
In order to keep characteristics and reliability level.
Negative environmental impact material
Transient Thermal Impedance Curve
Lead (Pb) and its compounds
Arsenic and its compounds
0.0001
0.001
0.01
0.1
Material
0.001
0.01
Time (s)
0.1
Contained part
Si chip
Solder
1
(Maximum Value)
Target
FWD
Spec.No.IGBT-SP-08007 R3 P
IGBT
Target
Target
Target
Target
Specification
10
4