mbn1200h45e2 CT-Concept Technologie AG, mbn1200h45e2 Datasheet

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mbn1200h45e2

Manufacturer Part Number
mbn1200h45e2
Description
Silicon N-channel Igbt
Manufacturer
CT-Concept Technologie AG
Datasheet
1.MBN1200H45E2.pdf (5 pages)
IGBT MODULE
Silicon N-channel IGBT 4500V E2 version
FEATURES
∗ Low conduction loss IGBT module.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
∗ Isolated heat sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
Junction Temperature
Storage Temperature
Isolation Voltage
Screw Torque
Notes: (1) Recommended Value 1.8±0.2/9±1N·m
ELECTRICAL CHARACTERISTICS
Gate Emitter Leakage Current
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
Collector Emitter Cut-Off Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Switching Times
Peak Forward Voltage Drop
Reverse Recovery Time
Turn On Loss
Turn Off Loss
Reverse Recovery Loss
Notes:(3) R
(delta Tc=70°C, N>30,000cycles)
G
C
E
MBN1200H45E2
CIRCUIT DIAGRAM
Waveforms (overshoot voltage, etc.) with appliance mounted.
TERMINALS
E
Please, determine the suitable R
C
G
Item
value is the test condition’s value for evaluation of the switching times, not recommended value.
Item
E
C
Turn On Time
Rise Time
Fall Time
Turn Off Time
Terminals
Mounting
E
C
(M6)
1ms
1ms
(M4/M8)
DC
DC
Symbol
E
E
V
V
E
E
E
Symbol
E
G
I
Rge
on(10%)
off(10%)
I
GE(TO)
CE(sat)
C
V
rr(10%)
on(full)
off(full)
V
GES
t
t
rr(full)
V
CES
V
value after the measurement of switching
t
t
T
on
t
off
FM
I
I
ies
rr
r
f
GES
I
T
CES
I
FM
Cp
ISO
-
-
o
C
stg
F
j
C
)
Unit
mA
J/ p
J/ p
nA
J/p
(2) Recommended Value 5.5±0.5N·m
nF
µs
µs
Ω
V
V
V
Unit
V
N·m
o
o
V
RMS
V
A
A
Min.
-500
TBD
TBD
C
C
5.4
1.0
1.4
1.5
3.6
-
-
-
-
-
-
-
-
-
-
-
OUTLINE DRAWING
Weight: 1550(g)
Typ.
155
3.7
6.4
0.8
2.0
2.7
3.0
5.5
2.9
0.8
3.9
4.3
4.2
4.8
3.2
3.5
25
-
-
Max.
+500 V
100
4.2
7.4
3.0
4.0
4.5
8.0
3.4
1.6
5.8
6.3
4.8
25
-
-
-
-
-
V
V
I
V
V
V
V
Ls=150nH
R
V
IF=1200A, V
Vcc=2600V, IF=1200A, Ls=150nH
Tj=125
V
R
V
C
CE
CE
GE
CE
CE
CE
CC
GE
CC
GE
=1200A, V
G
G
8,400 (AC 1 minute)
=3.3
= 3.3
MBN1200H45E2
Target
=4,500V, V
=4,500V, V
=±20V, V
=10V, I
=10V,V
=10V,V
=2,600V, Ic=1200A
=+/-15V, Tj=125
=2600V, Ic= IF=1200A, Ls=150nH
=+/-15V, Tj=125
o
Ω
-40 ~ +125
-50 ~ +125
C
Ω
1,200 (Tc=80
4,500
2,400
1,200
2,400
Test Conditions
C
Spec.No.IGBT-SP-08007 R3 P
±20
GE
GE
2/10
=1200mA, Tj=25
GE
GE
6
CE
(3)
=0V, f=100kHz, Tj=25
=0V, f=100kHz, Tj=25
Specification
(3)
=15V, Tj=125
GE
GE
=0V, Tj=125
=0V, Tj=25
=0V, Tj=25
=0V, Tj=125
o
o
C
C
(1)
(2)
o
Unit in mm
C)
o
C
o
o
C
o
o
C
C
o
C
C
o
o
C
C
1

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mbn1200h45e2 Summary of contents

Page 1

... E - 4.2 6.3 off(10 4.8 off(full 3.2 4.8 rr(10 3.5 rr(full) value after the measurement of switching G Spec.No.IGBT-SP-08007 R3 P Target Specification Unit in mm MBN1200H45E2 4,500 ±20 o 1,200 (Tc=80 C) 2,400 1,200 2,400 -40 ~ +125 -50 ~ +125 8,400 (AC 1 minute) 2/10 (1) 6 (2) Test Conditions o V =4,500V, V =0V, Tj= =4,500V, V ...

Page 2

... IGBT MODULE MBN1200H45E2 THERMAL CHARACTERISTICS Item IGBT Thermal Impedance FWD Contact Thermal Impedance DEFINITION OF TEST CIRCUIT Vce 90% 10% 10 ton Eon(10%)= ∫ ･ Eon(Full) = ∫ ･ Symbol Unit Min. Typ. ...

Page 3

... IGBT MODULE MBN1200H45E2 STATIC CHARACTERISTICS 2000 VGE=15V 25 ℃ ℃ ℃ ℃ 1500 1000 500 Collector-Emitter Voltage Vce[V] Collector Current vs. Collector to Emitter Voltage DYNAMIC CHARACTERISTICS 、 、 、 、 3 、 、 、 、 500 Collector Current Ic (A) or Forward Current, IF(A) Loss vs ...

Page 4

... IGBT MODULE MBN1200H45E2 TRANSIENT THERMAL IMPEDANCE 0.1 0.01 0.001 0.0001 0.001 Transient Thermal Impedance Curve Negative environmental impact material Please note that following materials are contained in the product In order to keep characteristics and reliability level. Material Lead (Pb) and its compounds Arsenic and its compounds ...

Page 5

... IGBT MODULE MBN1200H45E2 HITACHI POWER SEMICONDUCTORS 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use ...

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