SST29EE512-70-4C-EH SST [Silicon Storage Technology, Inc], SST29EE512-70-4C-EH Datasheet - Page 10

• Manufacturer Part Number: SST29EE512-70-4C-EH
• Description: 512 Kbit (64K x8) Page-Write EEPROM
• Manufacturer: SST [Silicon Storage Technology, Inc]

Data Sheet
AC CHARACTERISTICS
TABLE 9: R
TABLE 10: P
©2005 Silicon Storage Technology, Inc.
Symbol
T
T
T
T
T
T
T
T
T
Symbol
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
AA
AS
AH
RC
CE
OE
CLZ
OLZ
CHZ
OHZ
OH
WC
CS
CH
OES
OEH
CP
WP
DS
DH
BLC
BLCO
IDA
SCE
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
1
1
1
1
1
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
AGE
Parameter
Write Cycle (Erase and Program)
Address Setup Time
Address Hold Time
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
Data Setup Time
Data Hold Time
Byte Load Cycle Time
Byte Load Cycle Time
Software ID Access and Exit Time
Software Chip-Erase
EAD
-W
C
YCLE
RITE
C
T
IMING
YCLE
T
P
IMING
ARAMETERS FOR
P
ARAMETERS
SST29EE512
10
512 Kbit Page-Write EEPROM
Min
70
0
0
0
0.05
Min
200
50
70
70
35
0
0
0
0
0
0
Max
Max
SST29EE512
100
70
70
30
20
20
10
10
20
S71060-09-000
Units
T10.6 1060
Units
T9.3 1060
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
9/05