IRHNA3Z60 IRF [International Rectifier], IRHNA3Z60 Datasheet
IRHNA3Z60
Related parts for IRHNA3Z60
IRHNA3Z60 Summary of contents
Page 1
... RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2) Product Summary Part Number Radiation Level IRHNA7Z60 100K Rads (Si) IRHNA3Z60 300K Rads (Si) IRHNA4Z60 600K Rads (Si) IRHNA8Z60 1000K Rads (Si) 0.009 International Rectifier’s RADHard HEXFET ogy provides high performance power MOSFETs for space applications. This technology has over a de- cade of proven performance and reliability in satellite applications ...
Page 2
IRHNA7Z60 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...
Page 3
... Diode Forward Voltage SD 1. Part number IRHNA7Z60 2. Part numbers IRHNA3Z60, IRHNA4Z60 and IRHNA8Z60 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area ...
Page 4
IRHNA7Z60 1000 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 5.0V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...
Page 5
Pre-Irradiation 15000 1MHz iss rss gd C oss 12000 oss iss 9000 ...
Page 6
IRHNA7Z60 160 L IMITED BY PACKAGE 120 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 ...
Page 7
Pre-Irradiation 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms ...
Page 8
IRHNA7Z60 Foot Notes: Repetitive Rating; Pulse width limited by maximum junction temperature 25V, starting 25°C, L=0.17mH Peak 75A =12V I SD 75A, di/dt 94A 30V, T ...