IRHNA3Z60 IRF [International Rectifier], IRHNA3Z60 Datasheet - Page 2

• Manufacturer Part Number: IRHNA3Z60
• Description: RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
• Manufacturer: IRF [International Rectifier]

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
For footnotes refer to the last page
IRHNA7Z60
Note: Corresponding Spice and Saber models are available on the G&S Website.
*Current is limited by the internal wire diameter
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
R thJ-PCB
BV DSS / T J Temperature Coefficient of Breakdown
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-PC board
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
2.0
30
31
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
—
—
—
0.023
1800
7000
4800
Typ Max Units
0.42
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
300
245
75*
1.8
1.1
0.009
-100
250
100
104
370
280
150
4.0
421
°C/W
—
—
—
25
74
32
—
—
—
—
nS
µC
A
V
V/°C
S ( )
nH
nA
nC
ns
pF
V
V
A
Soldered to a 1” sq. copper-clad board
T j = 25°C, I F = 75A, di/dt
T
j
Measured from the center of
drain pad to center of source pad
= 25°C, I S = 75A, V GS = 0V
Reference to 25°C, I D = 1.0mA
V DS > 15V, I DS = 75A
V DS = V GS , I D = 1.0mA
V GS =12V, R G = 2.35
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V GS = 12V, I D = 75A
V GS =12V, I D = 75A
V GS = 0V, V DS = 25V
V DS = 24V ,V GS =0V
Test Conditions
V DD =15V, I D = 75A
V DD
V GS = -20V
V DS = 24V,
V GS = 20V
V DS = 15V
f = 1.0MHz
Pre-Irradiation
50V
www.irf.com
100A/ s