IRHNA3Z60 IRF [International Rectifier], IRHNA3Z60 Datasheet - Page 5

• Manufacturer Part Number: IRHNA3Z60
• Description: RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
• Manufacturer: IRF [International Rectifier]

Pre-Irradiation
www.irf.com
15000
12000
9000
6000
3000
1000
100
10
0
1
0.0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C oss

C iss
C rss

Drain-to-Source Voltage

V
V
1.0
DS
SD

V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
Forward Voltage
GS
iss
rss
oss

T = 25 C
J
2.0
=
=
=
=
0V,
C
C
C
gs
gd
ds
°
+ C
+ C
3.0
10
f = 1MHz
gd ,
gd

T = 150 C
J
C
4.0
ds

°
V
SHORTED
GS
5.0
= 0 V
100
6.0
1000
100
20
16
12
10
8
4
0
0

1
I =
Fig 8. Maximum Safe Operating Area

D
T
T
Single Pulse
C
J
= 25 C
= 150 C

Fig 6. Typical Gate Charge Vs.
75A
OPERATION IN THIS AREA LIMITED
V
Q , Total Gate Charge (nC)
DS
°
100
Gate-to-Source Voltage
°
G
, Drain-to-Source Voltage (V)
BY R
200
10


DS(on)
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 24V
= 15V
IRHNA7Z60
300

1 00us

1 ms

1 0ms
13
400
100
5