pdtc114e NXP Semiconductors, pdtc114e Datasheet - Page 2

• Manufacturer Part Number: pdtc114e
• Description: Npn Resistor-equipped Transistor; R1 = 10 Kohm, R2 = 10 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 05
PDTC114EE
PDTC114EEF
PDTC114EK
PDTC114EM
PDTC114ES
PDTC114ET
PDTC114EU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
NPN resistor-equipped transistor;
R1 = 10 k , R2 = 10 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TC114E
*16
*09
DS
09
09
04
(1)
(1)
PDTC114E series
PDTA114EE
PDTA114EEF
PDTA114EK
PDTA114EM
PDTA114ES
PDTA114ET
PDTA114EU
Product specification
10
10
PNP COMPLEMENT
TYP.
50
100
MAX.
V
mA
k
k
UNIT