pdtc114e NXP Semiconductors, pdtc114e Datasheet - Page 5

• Manufacturer Part Number: pdtc114e
• Description: Npn Resistor-equipped Transistor; R1 = 10 Kohm, R2 = 10 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
2004 Aug 05
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
c
NPN resistor-equipped transistor;
R1 = 10 k , R2 = 10 k
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 10 mA; I
= 100 A; V
= 10 mA; V
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
C
C
CB
E
B
B
B
= 0
= 5 mA
CE
CE
= 0
= 0
= 0; T
= 0.5 mA
= 10 V; f = 1 MHz
= 0.3 V
= 5 V
j
= 150 C
30
2.5
7
0.8
MIN.
PDTC114E series
1.1
1.8
10
1
TYP.
Product specification
100
1
50
400
150
0.8
13
1.2
2.5
MAX.
nA
mV
V
V
k
pF
UNIT
A
A
A