pdtc114e NXP Semiconductors, pdtc114e Datasheet - Page 4

• Manufacturer Part Number: pdtc114e
• Description: Npn Resistor-equipped Transistor; R1 = 10 Kohm, R2 = 10 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 m copper strip line.
2004 Aug 05
V
V
V
V
I
I
P
T
T
T
R
O
CM
SYMBOL
SYMBOL
stg
j
amb
CBO
CEO
EBO
I
tot
th j-a
NPN resistor-equipped transistor;
R1 = 10 k , R2 = 10 k
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
positive
negative
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
PARAMETER
PARAMETER
open emitter
open base
open collector
T
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
amb
25 C
4
CONDITIONS
in free air
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
CONDITIONS
65
65
MIN.
PDTC114E series
VALUE
250
500
500
625
833
500
500
50
50
10
+40
100
100
500
250
250
200
150
250
250
+150
150
+150
Product specification
10
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
V
V
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
mW
C
C
C
UNIT