ra07m4047msa Quanzhou Jinmei Electronic Co.,Ltd., ra07m4047msa Datasheet

ra07m4047msa

Manufacturer Part Number

ra07m4047msa

Description

Mitsubishi Rf Mosfet Module

Manufacturer

Quanzhou Jinmei Electronic Co.,Ltd.

Datasheet

1.RA07M4047MSA.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RA07M4047MSA

Quantity:

5 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

RA07M4047MSA

Manufacturer:

MITSUBISHI/三菱

Quantity:

20 000

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DESCRIPTION

Module for 7.2-volt portable radios that operate in the 400- to

470-MHz range.

enhancement-mode MOSFET transistors. Without the gate

voltage (V

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 2.5V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

may also be used for linear modulation by setting the drain

quiescent current with the gate voltage and controlling the output

power with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

• P

• η

• Broadband Frequency Range: 400-470MHz

• Low-Power Control Current I

• Module Size: 30 x 9.6 x 5.3 mm

• Linear operation is possible by setting the quiescent drain

RoHS COMPLIANCE

• RA07M4047MSA-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

ORDERING INFORMATION:

RA07M4047MSA

current with the gate voltage and controlling the output power

with the input power

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

2.Lead in electronic Ceramic parts.

out

>40% @ P

=3.5V, the typical gate current is 1 mA.

The RA07M4047MSA is a 7-watt RF MOSFET Amplifier

The battery can be connected directly to the drain of the

This module is designed for non-linear FM modulation, but

fluorescent tubes.

≅0 @ V

>7.0W @ V

RA07M4047MSA-101

ORDER NUMBER

=0V), only a small leakage current flows into the

ELECTROSTATIC SENSITIVE DEVICE

out

=7.2V, V

=6.5W (V

OBSERVE HANDLING PRECAUTIONS

=7.2V, V

=0V)

RoHS Compliance , 400-470MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO

control), V

=3.5V, P

=1mA (typ) at V

SUPPLY FORM

25 modules/tray

=50mW

Antistatic tray,

=7.2V, P

MITSUBISHI ELECTRIC

=3.5V

=50mW

1/8

RA07M4047MSA

BLOCK DIAGRAM

MITSUBISHI RF MOSFET MODULE

RF Input (P

Gate Voltage (V

Drain Voltage (V

RF Output (P

RF Ground (Case)

)

out

)

), Power Control

), Battery

5 Feb 2008

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