ra08n1317m Quanzhou Jinmei Electronic Co.,Ltd., ra08n1317m Datasheet

ra08n1317m

Manufacturer Part Number

ra08n1317m

Description

Mitsubishi Rf Mosfet Module

Manufacturer

Quanzhou Jinmei Electronic Co.,Ltd.

Datasheet

1.RA08N1317M.pdf (8 pages)

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Bonase Electronics (HK) Co., Limited

Part Number:

RA08N1317M

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ra08n1317m-101

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6 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

ra08n1317m-502

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MITSUBISHI

Quantity:

100

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DESCRIPTION

for 9.6-volt portable radios that operate in the 135- to 175-MHz

range.

enhancement-mode MOSFET transistors. Without the gate

voltage (V

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 2.5V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

• P

• η

• Broadband Frequency Range: 135-175MHz

• Low-Power Control Current I

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

RoHS COMPLIANCE

• RA08N1317M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

ORDERING INFORMATION:

RA08N1317M

current with the gate voltage and controlling the output power

with the input power

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

2.Lead in electronic Ceramic parts.

out

>50% @ P

=3.5V, the typical gate current is 1 mA.

The RA08N1317M is a 8-watt RF MOSFET Amplifier Module

The battery can be connected directly to the drain of the

fluorescent tubes.

≅0 @ V

>8W @ V

ORDER NUMBER

RA08N1317M-101

=0V), only a small leakage current flows into the

out

=9.6V, V

=8W (V

=9.6V, V

ELECTROSTATIC SENSITIVE DEVICE

=0V)

OBSERVE HANDLING PRECAUTIONS

RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

control), V

=3.5V, P

=1mA (typ) at V

=20mW

SUPPLY FORM

25 modules/tray

=9.6V, P

Antistatic tray,

MITSUBISHI ELECTRIC

=20mW

=3.5V

1/8

RA08N1317M

BLOCK DIAGRAM

MITSUBISHI RF MOSFET MODULE

RF Input (P

Gate Voltage (V

Drain Voltage (V

RF Output (P

RF Ground (Case)

PACKAGE CODE: H46S

)

out

)

), Power Control

), Battery

24 Jan 2006

Related parts for ra08n1317m

ra08n1317m Summary of contents

Page 1

... ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA08N1317M is a 8-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors ...

Page 2

... P =20mW in V =4.8-13.2V, P =10-30mW, P < out Load VSWR=4:1 V =13.2V, P =20mW out GG Load VSWR=20:1 MITSUBISHI ELECTRIC 2/8 MITSUBISHI RF POWER MODULE RA08N1317M RATING 16 13 -30 to +90 -40 to +110 MIN TYP MAX 135 175 8 50 -25 4:1 1 control parasitic oscillation control), No degradation or destroy ...

Page 3

... OUTPUT POWER and DRAIN CURRENT 5 25 f=160MHz out (V) MITSUBISHI ELECTRIC 3/8 MITSUBISHI RF POWER MODULE RA08N1317M V =9. =20mW in @P =8W out =8W out 140 150 160 170 180 FREQUENCY f(MHz out ...

Page 4

... 3 ( out 3.5 4 (V) MITSUBISHI ELECTRIC 4/8 MITSUBISHI RF POWER MODULE RA08N1317M versus GATE VOLTAGE 7 6 =9.6V, DD =20mW out 1.5 2 2.5 3 3.5 4 GATE VOLTAGE V ( Jan 2006 ...

Page 5

... OBSERVE HANDLING PRECAUTIONS OUTLINE DRAWING (mm) 30.0 ±0.2 26.6 ±0.2 (1.7) 21.2 ±0.2 (4.4) 1 6.1 ±1 13.7 ±1 18.8 ±1 23.9 ±1 RA08N1317M 2-R1.5 ±0 (19.2) MITSUBISHI ELECTRIC 5/8 MITSUBISHI RF POWER MODULE RA08N1317M RoHS COMPLIANCE Ø0.45 ±0. Input ( Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case out 24 Jan 2006 ...

Page 6

... Meter =50Ω G Directional Coupler Power DC Power Supply V Supply MITSUBISHI ELECTRIC 6/8 MITSUBISHI RF POWER MODULE RA08N1317M Spectrum 5 Analyzer =50Ω L Directional Attenuator Coupler + - Input (P 2 Gate Voltage (V 3 Drain Voltage ( Output ( Ground (Case) 24 Jan 2006 ...

Page 7

... R I =50% th(ch-case (°C/W) (A) 4.0 0.28 2.4 1. case =8W, the required thermal resistance R out MITSUBISHI ELECTRIC 7/8 MITSUBISHI RF POWER MODULE RA08N1317M V DD (V) 9 are: DD out in th(ch-case) + 4.8 °C case + 16.2 °C case ) below 90°C. For an ambient case = ( (case-air) case air / η ...

Page 8

... Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or mishap. RA08N1317M =3.5V (maximum), the nominal output power becomes available. GG Keep safety first in your circuit designs! MITSUBISHI ELECTRIC 8/8 MITSUBISHI RF POWER MODULE RA08N1317M RoHS COMPLIANCE 24 Jan 2006 ...

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