M48T37 ST Microelectronics, M48T37 Datasheet - Page 6

• Manufacturer Part Number: M48T37
• Description: 3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM
• Manufacturer: ST Microelectronics

M48T37Y, M48T37V
Table 7. Power Down/Up Trip Points DC Characteristics
(T
Note: 1. All voltages referenced to V
Table 8. Power Down/Up AC Characteristics
(T
Note: 1. V
Figure 5. Power Down/Up Mode AC Waveforms
6/20
Symbol
A
A
Symbol
V
t
V
t
REC
t
PFD
DR
= 0 to 70 C or –40 to 85 C)
= 0 to 70 C or –40 to 85 C)
t
FB
SO
F
t
2. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).
2. V
3. t
t
RB
R
(1)
(2)
(3)
es V
REC
PFD
PFD
V CC
V PFD (max)
V PFD (min)
V SO
RST
INPUTS
OUTPUTS
Power-fail Deselect Voltage
Battery Back-up Switchover Voltage
Expected Data Retention Time (25 C)
PFD
(min) = 20ms for Industrial Temperature Range - grade 6 device.
(min) to V
(max) to V
V
V
V
V
V
(min).
PFD
PFD
PFD
SS
PFD
to V
(min) to V
(max) to V
(min) to V
(max) to RST High
SS
PFD
PFD
fall time of less than t
(min) fall time of less than tF may result in deselection/write protection not occurring until 200 s after V
(min) V
VALID
VALID
PFD
SS
PFD
SS
V
tF
.
(max) V
CC
CC
(min) V
Parameter
Fall Time
Rise Time
Parameter
CC
FB
CC
may cause corruption of RAM data.
Fall Time
Rise Time
tFB
M48T37Y
M48T37V
M48T37Y
M48T37V
Grade 1
Grade 6
tDR
DON’T CARE
M48T37Y
M48T37V
HIGH-Z
(1)
10
Min
4.2
2.7
5
(2)
tRB
V
PFD
Min
300
150
10
10
40
1
V
Typ
4.4
2.9
–100mV
BAT
7
tR
Max
200
tREC
Max
VALID
VALID
4.5
3.0
AI03078
YEARS
YEARS
Unit
ms
Unit
CC
s
s
s
s
s
V
V
V
V
pass-