X3100PT-V XICOR [Xicor Inc.], X3100PT-V Datasheet - Page 9

• Manufacturer Part Number: X3100PT-V
• Description: 3 or 4 Cell Li-Ion Battery Protection and Monitor IC
• Manufacturer: XICOR [Xicor Inc.]

X3100/X3101 – Preliminary Information
REV 1.1.8 12/10/02
Table 8. Cell Charging Threshold Voltage Selection.
Cell Number Selection
The X3100 is designed to operate with four (4) Li-Ion
battery cells. The X3101 is designed to operate with
three (3) Li-Ion battery cells. The CELLN bit of the
configuration register (Table 9) sets the number of cells
recognized. For the X3101, the value for CELLN should
always be zero.
Table 9. Selection of Number of Battery Cells
The configuration register consists of 16 bits of
NOVRAM memory (Table 2, Table 3). This memory
features a high-speed static RAM (SRAM) overlaid bit-
for-bit
automatic array recall operation reloads the contents of
the shadow EEPROM into the SRAM configuration
register upon power-up (Figure 3).
Configuration
Register Bit
Configuration Register Bits
1. In the case that the X3100 or X3101 is configured for use with
CELLN
VCE1
only three Li-Ion battery cells (i.e. CELLN=0), then VCELL4 (pin
7) MUST be tied to Vss (pin 9) to ensure correct operation.
0
0
1
1
1
0
with
non-volatile “Shadow” EEPROM. An
4 Li-Ion battery cells (X3100 default)
3 Li-Ion battery cells (X3100 or X3101)
VCE0
0
1
0
1
Operation
V
V
V
V
CE
CE
CE
CE
Operation
= 0.5V
= 0.80V
= 1.10V
= 1.40V
1
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Figure 3. Power up of
The configuration register is designed for unlimited write
operations to SRAM, and a minimum of 1,000,000 store
operations to the EEPROM. Data retention is specified
to be greater than 100 years.
It should be noted that the bits of the shadow EEPROM
are for the dedicated use of the configuration register,
and are NOT part of the general purpose 4kbit
EEPROM array.
T
register, see Table 30 and section “X3100/X3101 SPI
Serial Communication” on page 22.
After writing to this register using a WCFIG instruction,
data will be stored only in the SRAM of the configuration
register. In order to store data in shadow EEPROM, a
WREN instruction, followed by a EEWRITE to any
address of the 4kbit EEPROM memory array must
occur, see Figure 4. This sequence initiates an internal
nonvolatile write cycle which permits data to be stored
in the shadow EEPROM cells. It must be noted that
even though a EEWRITE is made to the general
purpose 4kbit EEPROM array, the value and address to
which it is written, is unimportant. If this procedure is not
followed, the configuration register will power up to the
last previously stored values following a power down
sequence.
he WCFIG command writes to the configuration
Configuration Register (SRAM)
Upper Byte
Recall
Characteristics subject to change without notice.
Configuration Register
Lower Byte
Shadow EEPROM
Recall
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