R2J20602NP-G3 RENESAS [Renesas Technology Corp], R2J20602NP-G3 Datasheet - Page 3

• Manufacturer Part Number: R2J20602NP-G3
• Description: Integrated Driver - MOS FET (DrMOS)
• Manufacturer: RENESAS [Renesas Technology Corp]

R2J20602NP
Integrated Driver – MOS FET (DrMOS)
Description
The R2J20602NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in
a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this
device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier
diode (SBD), eliminating the need for an external SBD for this purpose.
Integrating a driver and both high-side and low-side power MOS FETs, the new device is also compliant with the
package standard “Integrated Driver – MOS FET (DrMOS)” proposed by Intel Corporation.
Features
 Built-in power MOS FET suitable for applications with 12 V input and low output voltage
 Built-in driver circuit which matches the power MOS FET
 Built-in tri-state input function which can support a number of PWM controllers
 VIN operating-voltage range: 16 V max
 High-frequency operation (above 1 MHz) possible
 Large average output current (Max. 40 A)
 Achieve low power dissipation (About 4.4 W at 1 MHz, 25 A)
 Controllable driver: Remote on/off
 Built-in Schottky diode for bootstrapping
 Low-side drive voltage can be independently set
 Small package: QFN56 (8 mm  8 mm  0.95 mm)
 Terminal Pb-free/Halogen-free
Outline
REJ03G1480-0500 Rev.5.00 Mar 12, 2010
Page 1 of 14
DISBL#
Reg5V
PWM
CGND VLDRV
VCIN
MOS FET Driver
BOOT
GH
GL
PGND
VIN
VSWH
56
43
42
1
QFN56 package 8 mm × 8 mm
Driver
Tab
Low-side MOS Tab
(Bottom view)
High-side MOS
Tab
REJ03G1480-0500
Mar 12, 2010
14
29
Rev.5.00
15
28