CM200DU-24NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-24NFH_09 Datasheet - Page 3

• Manufacturer Part Number: CM200DU-24NFH_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
400
350
300
250
200
150
100
10
10
10
50
0
COLLECTOR-EMITTER VOLTAGE V
9
8
7
6
5
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
7
5
3
2
7
5
3
2
3
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
T
V
j
GE
= 25°C
FORWARD CHARACTERISTICS
VOLTAGE CHARACTERISTICS
50 100 150 200
OUTPUT CHARACTERISTICS
COLLECTOR CURRENT I
= 15V
T
T
2
1
j
j
FREE-WHEEL DIODE
= 25°C
= 125°C
T
j
= 125°C
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
2
V
GE
(V)
250 300
=20
6
3
T
j
= 25°C
C
8
4
15
14
( A )
350 400
CE
EC
13
12
11
10
9
8
10
( V )
( V )
5
3
10
400
350
300
250
200
150
100
10
10
10
50
10
–1
0
8
6
4
2
0
10
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
CE
TRANSFER CHARACTERISTICS
GE
VOLTAGE CHARACTERISTICS
2
8
= 10V
= 0V
3 5 7
5
HIGH POWER SWITCHING USE
10
10
MITSUBISHI IGBT MODULES
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
CM200DU-24NFH
12
2
10
3 5 7
14
10
16
1
T
T
15
j
j
T
I
I
C
C
= 25°C
= 125°C
2
I
j
C
GE
= 25°C
GE
= 400A
= 200A
3 5 7
C
C
C
18
= 80A
ies
oes
res
( V )
( V )
CE
20
20
10
( V )
2
Feb. 2009