CM200DU-12NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-12NFH_09 Datasheet

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CM200DU-12NFH_09

Manufacturer Part Number
CM200DU-12NFH_09
Description
IGBT MODULES HIGH POWER SWITCHING USE
Manufacturer
MITSUBISHI [Mitsubishi Electric Semiconductor]
Datasheet
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM200DU-12NFH
3–M5NUTS
12mm deep
7
17
C2E1
16
2.5
23
LABEL
80
94
25
E2
±0.25
23
2.5
T
C
16
12
C1
measured point
13.5
TAB
2–φ6.5
MOUNTING HOLES
#110. t=0.5
¡I
¡V
¡Insulated Type
¡2-elements in a pack
CM200DU-12NFH
C ...................................................................
CES ............................................................
C2E1
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
CIRCUIT DIAGRAM
E2
4
Dimensions in mm
Feb. 2009
200A
600V
C1

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CM200DU-12NFH_09 Summary of contents

Page 1

... Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM ±0. C2E1 3–M5NUTS 12mm deep 2.5 2 LABEL CM200DU-12NFH HIGH POWER SWITCHING USE ¡I C ................................................................... ¡V CES ............................................................ ¡Insulated Type ¡2-elements in a pack T measured point C 2–φ6.5 MOUNTING HOLES C1 12 13.5 TAB #110. t=0.5 ...

Page 2

... IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound Applied Case temperature measured point is just under the chips (1/2 module) ) does not exceed MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE Ratings 600 ±20 200 400 (Note 2) 200 (Note 2) ...

Page 3

... C ies 10 C oes C res ( MITSUBISHI IGBT MODULES CM200DU-12NFH HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 150 200 250 300 350 400 ...

Page 4

... V – – – – 400 200 600 GATE CHARGE Q 4 CM200DU-12NFH – Single Pulse T = 25° – – – –5 10 – ...

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