CM200DU-24NFH_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM200DU-24NFH_09 Datasheet - Page 4

• Manufacturer Part Number: CM200DU-24NFH_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
Per unit base =
R
I
C
th(j–c)
2 3 5 7
IMPEDANCE CHARACTERISTICS
= 200A
200 400 600 800 1000 1200 1400
COLLECTOR CURRENT I
2
= 0.15K/W
GATE CHARGE Q
TRANSIENT THERMAL
10
3
–2
HALF-BRIDGE
2 3 5 7
5 7
( TYPICAL )
( TYPICAL )
( IGBT part )
TIME ( s )
V
10
CC
10
10
2
–1
–5
= 400V
2 3 5 7
2 3 5 7
Conditions:
V
V
R
T
Inductive load
2
G
t
t
t
t
CC
GE
j
Single Pulse
T
G
d(off)
d(on)
r
f
V
= 125°C
C
( nC )
10
10
= 1.6Ω
3
CC
= 600V
= ±15V
= 25°C
C
0
–4
= 600V
2 3 5 7
2 3 5 7
( A )
5 7
10
10
10
10
10
10
3
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
0
10
Per unit base =
R
1
–3
T
th(j–c)
IMPEDANCE CHARACTERISTICS
2 3 5 7
j
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
= 0.24K/W
TRANSIENT THERMAL
10
3
HIGH POWER SWITCHING USE
–2
2 3 5 7
MITSUBISHI IGBT MODULES
5 7
( FWDi part )
( TYPICAL )
CM200DU-24NFH
TIME ( s )
10
10
10
2
–1
–5
2 3 5 7
2 3 5 7
Conditions:
V
V
R
T
Inductive load
2
j
Single Pulse
T
I
t
CC
GE
G
rr
rr
= 25°C
C
10
3
E
10
= 1.6Ω
= 25°C
= 600V
= ±15V
( A )
–4
0
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
3
7
5
3
2
7
5
3
2
1
–3
Feb. 2009
3
2
1
–1
–2
–3