K6T4008C Samsung semiconductor, K6T4008C Datasheet - Page 2

• Manufacturer Part Number: K6T4008C
• Description: 512Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

512Kx8 bit Low Power CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
I/O1
I/O2
I/O3
VSS
K6T4008C1B Family
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
Product Family Operating Temperature Vcc Range
Process Technology: TFT
Organization: 512Kx8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 32-DIP-600, 32-SOP-525
K6T4008C1B-B
K6T4008C1B-P
K6T4008C1B-F
K6T4008C1B-L
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
I/O
32-TSOP2
A
(Forward)
32-SOP
32-DIP
0
WE
Vcc
Vss
CS
OE
1
~A
~I/O
18
8
32-TSOP2-400F/R
Commercial (0~70 C
Inderstrial (-40~85 C
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Write Enable Input
Chip Select Input
Output Enable Input
Address Inputs
Data Inputs/Outputs
Power
Ground
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
WE
CS
OE
A15
A17
A13
A11
A10
A8
A9
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Function
32-TSOP2
(Reverse)
4.5~5.5V
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
VSS
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
55
Speed
1)
/70ns
2
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and various package
types for user flexibility of system design. The family also
support low data retention voltage for battery back-up oper-
ation with low data retention current.
The K6T4008C1B families are fabricated by SAMSUNG s
CS
WE
OE
(I
Standby
SB1
I/O
I/O
100 A
100 A
20 A
50 A
Power Dissipation
1
8
, Max)
Control
logic
A18
A16
A14
A12
A7
A6
A5
A4
A1
A0
Clk gen.
(I
Operating
CC2
80mA
, Max)
Data
cont
Data
cont
Row
select
A9 A8 A13A17 A15
32-DIP-600, 32-SOP-525
CMOS SRAM
32-TSOP2-400F/R
32-TSOP2-400F/R
Precharge circuit.
Memory array
1024 rows
512 8 columns
32-SOP-525
Column select
PKG Type
I/O Circuit
September 1998
A10
Revision 3.0
A11
A3
A2