K6T4008C Samsung semiconductor, K6T4008C Datasheet - Page 5

• Manufacturer Part Number: K6T4008C
• Description: 512Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

AC CHARACTERISTICS
DATA RETENTION CHARACTERISTICS
K6T4008C1B Family
AC OPERATING CONDITIONS
TEST CONDITIONS
Read
Write
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Output load (See right): C
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
Item
Parameter List
(Test Load and Test Input/Output Reference)
C
L
L
=50pF+1TTL
=100pF+1TTL
Symbol
t
t
V
I
SDR
RDR
(Vcc=4.5~5.5V, Commercial product: T
DR
DR
CS Vcc-0.2V
Vcc=3.0V, CS Vcc-0.2V
See data retention waveform
Test Condition
5
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHZ
t
t
t
OHZ
t
t
OLZ
WC
CW
AW
WP
WR
DW
OW
CO
OE
OH
RC
AA
HZ
AS
DH
LZ
A
K6T4008C1B-L
K6T4008C1B-B
K6T4008C1B-P
K6T4008C1B-F
=0 to 70 C, Industrial product: T
Min
1. Including scope and jig capacitance
55
10
10
55
45
45
40
25
5
0
0
0
0
0
0
5
-
-
-
C
55*ns
L
1)
Max
55
55
25
20
20
20
Speed Bins
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
2.0
0
5
-
-
-
-
Min
70
10
10
70
60
60
50
30
5
0
0
0
0
0
0
5
-
-
-
CMOS SRAM
Typ
70ns
A
-
-
-
-
-
-
-
=-40 to 85 C)
Max
70
70
35
25
25
25
-
-
-
-
-
-
-
-
-
-
-
-
-
September 1998
Max
5.5
50
15
50
20
-
-
Revision 3.0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
ms
V
A