AM28F020A-120EC AMD [Advanced Micro Devices], AM28F020A-120EC Datasheet - Page 2

• Manufacturer Part Number: AM28F020A-120EC
• Description: 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
• Manufacturer: AMD [Advanced Micro Devices]

Embedded Program
The Am28F020A is byte programmable using the
Embedded Program algorithm, which does not require
the system to time-out or verify the data programmed.
The typical room temperature programming time of this
device is four seconds.
Commands are written to the command register using
standard microprocessor write timings. Register con-
tents serve as input to an internal state-machine,
which controls the erase and programming circuitry.
During write cycles, the command register internally
latches addresses and data needed for the program-
ming and erase operations. For system design
simplification, the Am28F010A is designed to support
2
Embedded
Programming
Algorithm vs.
Flashrite
Programming
Algorithm
Embedded Erase
Algorithm vs.
Flasherase Erase
Algorithm
Comparing Embedded Algorithms with Flasherase and Flashrite Algorithms
AMD’s Embedded Programming algorithm
requires the user to only write a program
set-up command and a program command
(program data and address). The device
automatically times the programming
pulse width, verifies the programming, and
counts the number of sequences. A status
bit, Data# Polling, provides the user with
the programming operation status.
AMD’s Embedded Erase algorithm
requires the user to only write an erase set-
up command and erase command. The
device automatically pre-programs and
verifies the entire array. The device then
automatically times the erase pulse width,
verifies the erase operation, and counts
the number of sequences. A status bit,
Data# Polling, provides the user with the
erase operation status.
Embedded Algorithms
Am28F020A with
Am28F020A
Embedded Erase
The entire device is bulk erased using the Embedded
Erase algorithm, which automatically programs the
entire array prior to electrical erase. The timing and ver-
ification of electrical erase are controlled internal to the
device. Typical erasure time at room temperature is five
seconds, including preprogramming.
either WE
write cycle, addresses are latched on the falling edge
of WE
on the rising edge of WE
first. To simplify the following discussion, the WE
is used as the write cycle control pin throughout the
rest of this text. All setup and hold times are with
respect to the WE
#
The Flashrite Programming algorithm requires the
user to write a program set-up command, a program
command, (program data and address), and a
program verify command, followed by a read and
compare operation. The user is required to time the
programming pulse width in order to issue the
program verify command. An integrated stop timer
prevents any possibility of overprogramming.
Upon completion of this sequence, the data is read
back from the device and compared by the user with
the data intended to be written; if there is not a
match, the sequence is repeated until there is a
match or the sequence has been repeated 25 times.
The Flasherase Erase algorithm requires the device
to be completely programmed prior to executing an
erase command.
To invoke the erase operation, the user writes an
erase set-up command, an erase command, and an
erase verify command. The user is required to time
the erase pulse width in order to issue the erase
verify command. An integrated stop timer prevents
any possibility of overerasure.
Upon completion of this sequence, the data is read
back from the device and compared by the user with
erased data. If there is not a match, the sequence is
repeated until there is a match or the sequence has
been repeated 1,000 times.
or CE
#
or CE
#
Am28F020 using AMD Flashrite
, whichever occurs last. Data is latched
and Flasherase Algorithms
#
#
controlled writes. During a system
signal.
#
or CE
#
, whichever occurs
#
pin